Overview
The 2N7002DW is a dual N-channel enhancement-mode MOSFET designed for compact, low-power switching applications. It integrates two independent MOSFETs in a space-saving SOT363 (SC-88) package, making it ideal for high-density designs. With a drain-source voltage rating of 60 V, low gate threshold of 0.8–2.0 V, and an on-resistance as low as 7.5 Ω at VGS = 10 V, the device delivers efficient performance in signal switching, load drivers, battery-powered devices, and logic-level interface circuits.
Core Parameters
| Parameter | Specification |
|---|---|
| Type | Dual N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 60 V |
| Gate-Source Voltage (VGS) | ±20 V |
| Continuous Drain Current (ID) | 320 mA @ TA = 25°C |
| Power Dissipation (Pd) | 370 mW |
| Gate Threshold Voltage (VGS(th)) | 0.8–2.0 V |
| RDS(on) | 7.5 Ω @ VGS = 10 V, 13 Ω @ VGS = 4.5 V |
| Input Capacitance (Ciss) | 50 pF typical |
| Reverse Recovery Time (trr) | 6 ns |
| Package | SOT363 (SC-88) |
Features
- Dual N-channel MOSFETs integrated in a compact SOT363 package
- 60 V drain-source capability for broad low-voltage switching use cases
- Low RDS(on): 7.5 Ω at 10 V, 13 Ω at 4.5 V
- Logic-level gate drive support
- Fast switching speed with 6 ns reverse recovery
- Low capacitance for improved efficiency in high-speed applications
- Suitable for battery-powered and portable electronics
- RoHS compliant and optimized for automated SMD assembly
Typical Application Scenarios
| Application | Why 2N7002DW Fits |
|---|---|
| Load Switching in Portable Devices | Dual MOSFETs reduce board space while supporting up to 60 V |
| Logic-Level Translation | Low gate threshold enables direct drive from MCUs |
| Battery Protection Circuits | Fast switching and low leakage improve efficiency |
| Small Relay Replacement | Compact MOSFET pair provides silent and efficient switching |
| Power Management | SOT363 package allows high-density multi-channel control |
| LED Drivers & Sensor Modules | Clean switching with low gate charge and fast recovery time |
Performance Comparison
| Parameter | 2N7002DW | Typical Single 2N7002 | General Dual MOSFET |
|---|---|---|---|
| VDS Rating | 60 V | 60 V | 30–60 V |
| Channels | 2 | 1 | 2 |
| RDS(on) @ 10 V | 7.5 Ω | 5–7 Ω | 10–20 Ω |
| Gate Drive | Logic level | Logic level | Varies |
| Package Size | SOT363 | SOT23 | SOT363 / SOT563 |
Conclusion
The 2N7002DW offers a compact and efficient dual MOSFET solution for modern low-power switching applications. With a 60 V rating, competitive on-resistance, fast switching characteristics, and a small SOT363 package, it is well-suited for portable electronics, logic-level control, and high-density PCB layouts. Engineers seeking reliable and space-optimized N-channel switching devices will find the 2N7002DW an excellent fit.
Manufacturer Profile
The 2N7002DW is manufactured by multiple established semiconductor vendors including Diodes Inc., Nexperia, Vishay, and several other global suppliers. Performance is consistent across manufacturers due to standardized specifications, allowing engineers to choose based on sourcing strategy, availability, and cost. Selection should always prioritize key electrical parameters such as RDS(on), VDS rating, and package quality.
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