PBSS4230PANP,115

NXP PBSS4230PANP,115

Table of Contents

Overview

The PBSS4230PANP,115 is a high-current, low VCE(sat) NPN transistor designed for efficient switching in compact electronics. With a 30 V collector-emitter voltage rating and continuous collector current up to 5 A, it supports robust load driving while maintaining very low conduction losses. The device is housed in the SOT-106 / CFP3 package, allowing high thermal performance in limited board space. Its fast switching, low saturation voltage, and high reliability make it suitable for power stages, LED drivers, DC–DC converters, and various low-voltage control circuits.


Core Parameters

ParameterSpecification
Transistor TypeNPN, Low VCE(sat)
VCEO (Collector-Emitter Voltage)30 V
IC (Continuous Collector Current)5 A
Peak Collector Current10 A
VCE(sat) @ 2 A / 500 mA60 mV / 20 mV
hFE (DC Current Gain)100 (typical at 2 A)
Total Power Dissipation1.65 W (at TA = 25°C)
PackageCFP3 (SOT-106)
Operating Temperature–55°C to +150°C junction

Features

  • Low VCE(sat) down to 60 mV at 2 A for reduced conduction losses
  • High collector current capability: 5 A continuous, 10 A peak
  • Compact CFP3 (SOT-106) package with excellent thermal resistance
  • Fast switching behavior suitable for PWM and power-management circuits
  • High gain (hFE) ensures efficient drive using low-power control stages
  • AEC-Q101 qualified, supporting automotive demands
  • Suitable for space-limited or high-density PCB designs

Typical Application Scenarios

ApplicationWhy PBSS4230PANP,115 Fits
DC–DC Converter Low-Side SwitchingLow VCE(sat) reduces switching losses and heat generation
LED DriversHigh IC and low voltage drop allow efficient LED current regulation
Motor / Solenoid Control (Low Voltage)5 A capability supports small motors and inductive loads
Automotive ModulesAEC-Q101 qualification ensures long-term reliability
Battery-Powered DevicesLow losses extend battery life
High-Density Power BoardsCompact CFP3 footprint improves layout flexibility

Performance Comparison

FeaturePBSS4230PANP,115Standard NPN TransistorMOSFET (logic-level, small)
VCE(sat)Very low (60 mV @ 2 A)Higher (150–300 mV)Not applicable
IC Rating5 A1–2 A typical2–4 A typical
Drive RequirementsSimple, low-power base driveSimilarRequires VGS, sometimes higher voltage
Package SizeCFP3 (very small)Larger SOT-223 / TO-252Often similar or larger
Switching SpeedHighMediumHigh

The PBSS4230PANP,115 often wins in cost, simplicity, and efficiency when designers want MOSFET-like performance without MOSFET gate-drive requirements.


Conclusion

The PBSS4230PANP,115 delivers high current handling, extremely low saturation voltage, and excellent thermal performance in a compact SOT-106 form factor. Its combination of 5 A capability, 60 mV VCE(sat), and automotive-grade qualification makes it well suited for modern power-switching designs ranging from LED drivers and DC–DC converters to automotive load control. For engineers who need strong performance without increasing BOM cost or PCB area, this transistor is a highly efficient and reliable choice.


Manufacturer Profile

Nexperia

Nexperia specializes in high-volume, high-reliability discrete semiconductors, logic devices, and MOSFETs. Their portfolio is optimized for automotive, industrial, and consumer electronics applications, with the PBSS4230 series representing advanced low-saturation bipolar transistor technology tailored for compact and efficient power switching solutions.


For more information and to review our available inventory, please contact our team for detailed pricing, current stock levels, and any additional technical support you may need.

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