Infineon FM25V05-GTR

12/08/2025
- 7SE

Overview

The FM25V05-GTR is a 512-Kbit serial F-RAM (Ferroelectric RAM) that provides non-volatile data storage with extremely high endurance and fast write performance. It supports a standard SPI interface up to 40 MHz, operates from a 2.0 V to 3.6 V supply, and performs writes with no delay or wear-leveling requirements. Its ability to sustain 10¹⁴ read/write cycles and retain data for more than a century makes it highly suitable for mission-critical and frequently updated embedded applications.

Core Parameters

Parameter	Specification
Memory Density	512 Kbit (64 K × 8)
Interface	SPI
Max Clock Frequency	40 MHz
Supply Voltage	2.0 V to 3.6 V
Read/Write Endurance	100 trillion (10¹⁴) cycles
Data Retention	151 years (typical)
Standby Current	~90 µA
Sleep Current	~5 µA
Active Current	~300 µA @ 1 MHz
Operating Temperature	–40 °C to +85 °C
Package	SOIC-8

Features

Non-volatile memory with RAM-like performance
No write-cycle delay; writes complete at bus speed
10¹⁴ write endurance, far exceeding EEPROM and flash
40 MHz SPI bus operation
Single-supply operation from 2.0–3.6 V
Byte-addressable for flexible data manipulation
Ultra-low sleep and standby current
Industrial-grade temperature capability
Drop-in compatible with many SPI EEPROM/Flash pinouts

Typical Application Scenarios

Application	Why FM25V05-GTR Is Suitable
Industrial data logging	Withstand constant writes without wear-out
Real-time sensor recording	No-delay writes prevent data loss during high-frequency updates
System configuration storage	Retains parameters for decades after power loss
Portable and battery-powered devices	Low voltage and low sleep current extend battery life
Reliable event recording	F-RAM ensures long-term integrity even under rapid write conditions
EEPROM-to-FRAM upgrades	SPI compatibility simplifies migration

Performance Comparison

Feature	FM25V05-GTR	EEPROM	SPI Flash
Endurance	10¹⁴ cycles	10⁵–10⁶	10⁴–10⁵
Write Speed	Immediate, bus-speed	Slow, requires write cycle	Page-based, requires erase
Data Retention	151 years	10–30 years	10–20 years
Voltage Range	2.0–3.6 V	1.7–5.5 V	Typically 3.3 V
Write Granularity	Byte-addressable	Byte/page	Page
Risk of data corruption	Very low	Moderate	Higher due to erase/write operations

The FM25V05-GTR offers dramatically higher endurance and reliability while preserving simplicity through a standard SPI interface.

Conclusion

The FM25V05-GTR is a durable and efficient 512-Kbit SPI F-RAM designed for embedded systems requiring frequent writes, ultra-long data retention, and low power consumption. Its combination of 100-trillion-cycle endurance, instant writes, industrial temperature tolerance, and broad voltage compatibility makes it a reliable choice for logging, parameter storage, real-time monitoring, and long-lifecycle industrial equipment.

Manufacturer Profile

Manufacturer Profile

Infineon Technologies develops a wide portfolio of non-volatile memory solutions, including the F-RAM family used in long-lifecycle, frequent-write, and industrial-grade applications. The FM25V05-GTR belongs to this product line, benefiting from Infineon’s focus on high reliability, robust endurance characteristics, and strong support for embedded and industrial markets.

For more information and to review our available inventory, please contact our team for detailed pricing, current stock levels, and any additional technical support you may need.

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