Overview
The STW48N60M2 is a 600 V N-channel power MOSFET designed for high-efficiency power conversion and switching applications. It is widely used in SMPS, PFC stages, and industrial power supplies, where low conduction loss, fast switching performance, and high ruggedness are required.
Based on STMicroelectronics’ MDmesh™ M2 technology, the STW48N60M2 delivers an optimized balance between low RDS(on) and switching speed, making it suitable for demanding high-voltage designs.
Core Parameters
| Parameter | Typical Value |
|---|---|
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) | 48 A |
| RDS(on) (max) | ~0.08 Ω |
| Gate Charge (Qg) | Low (optimized for fast switching) |
| Technology | MDmesh™ M2 |
| Package | TO-247 |
These parameters make the device suitable for high-power and high-voltage switching applications, especially where efficiency and thermal performance are critical.
Features
- 600 V N-channel power MOSFET
- MDmesh™ M2 technology for reduced conduction and switching losses
- Low RDS(on) with high current capability
- Fast switching characteristics
- High avalanche and commutation ruggedness
- Suitable for hard-switching topologies
Typical Application Scenarios
- Switch-mode power supplies (SMPS)
- Power factor correction (PFC) circuits
- Industrial power converters
- Welding equipment
- Motor drive and inverter stages
- High-voltage DC-DC conversion systems
In many high-voltage power supply and inverter designs, the STW48N60M2 MOSFET is driven by a dedicated high-side/low-side gate driver such as the L6388ED013TR. Using these devices together helps improve switching efficiency, reduce losses, and ensure reliable gate control in half-bridge power topologies.
Performance Comparison
Compared with conventional planar MOSFETs, the STW48N60M2 offers lower conduction losses and improved switching efficiency thanks to its MDmesh™ M2 structure. When compared to earlier MDmesh generations, it achieves better thermal behavior and reduced gate charge, helping designers increase overall system efficiency without compromising reliability.
Conclusion
The STW48N60M2 is a robust and efficient 600 V power MOSFET well-suited for modern high-power designs. Its combination of low RDS(on), fast switching speed, and proven MDmesh™ M2 technology makes it a dependable choice for industrial and power supply applications requiring high efficiency and long-term reliability.
Manufacturer Profile
STMicroelectronics is a global semiconductor leader specializing in analog, power, and embedded solutions. With a strong focus on power efficiency and system integration, ST’s MOSFET portfolio—including the MDmesh™ family—is widely adopted across industrial, automotive, and energy markets.
FAQ
Q1: What type of applications is STW48N60M2 best suited for?
A: STW48N60M2 is ideal for high-voltage power switching applications such as SMPS, PFC circuits, industrial power supplies, and inverter systems.
Q2: What advantages does MDmesh™ M2 technology provide?
A: MDmesh™ M2 technology reduces both conduction and switching losses while improving thermal performance, enabling higher efficiency and reliability in power designs.
Q3: Can STW48N60M2 handle high current and harsh operating conditions?
A: Yes. With a 48 A current rating and strong avalanche ruggedness, it is designed to operate reliably in demanding industrial environments.
Q4: How can the quality of STW48N60M2 be verified?
A: 7SEtronic follows a complete quality inspection SOP, including label verification, visual inspection, and X-ray analysis, ensuring authenticity and reliable performance.
For more information and to review our available inventory, please contact our team for detailed pricing, current stock levels, and any additional technical support you may need.
You can find more component guides and application notes in our Component Technical Guides section: