Overview
The FDMS6681Z is a –30 V P-channel Power MOSFET designed for high-side switching, battery protection, and low-loss power management. With a continuous drain current rating of approximately 21 A, pulsed capability up to 49 A, and an on-resistance as low as 3.2 mΩ, it delivers strong performance in compact, high-efficiency designs. Its PQFN (Power56) package provides excellent thermal handling while maintaining a small footprint for modern high-density PCBs.
Core Parameters
| Parameter | Specification |
|---|---|
| Drain-Source Voltage (VDS) | –30 V |
| Continuous Drain Current (ID, 25°C) | ~21 A |
| Pulsed Drain Current (IDM) | Up to ~49 A |
| RDS(on) @ VGS = –10 V | ~3.2 mΩ |
| RDS(on) @ VGS = –4.5 V | ~5.0 mΩ |
| Gate Threshold Voltage (VGS(th)) | –1 to –3 V (typical range) |
| Gate Charge (Qg) | ~241 nC |
| Operating Junction Temperature | –55°C to +150°C |
| Package | PQFN / Power56 (8-pin) |
Features
- Very low RDS(on) for reduced conduction losses in load-switch and power-management stages
- P-channel device simplifies high-side switching without a dedicated driver
- Capable of handling large currents for compact DC rails and battery systems
- Low gate charge enables efficient switching and low switching losses
- Strong thermal capability thanks to the PQFN Power56 package
- High robustness and stable performance across a wide junction-temperature range
Typical Application Scenarios
| Application | Why FDMS6681Z Fits |
|---|---|
| Battery protection circuits | P-channel MOSFET enables simple high-side disconnect with minimal voltage drop |
| Load switching for 5 V / 12 V power rails | Low RDS(on) ensures low heat generation and high efficiency |
| Power path control in portable devices | High current rating and compact footprint suit space-constrained designs |
| Reverse-polarity protection | MOSFET topology allows low-loss implementation compared with diodes |
| General DC power distribution | –30 V rating supports a wide range of low-voltage systems |
Performance Comparison
| Feature | FDMS6681Z | Typical Older P-Channel MOSFET | Small N-Channel MOSFET |
|---|---|---|---|
| RDS(on) | Very low (~3.2 mΩ) | Moderate (8–20 mΩ) | Lower, but requires high-side driver |
| High-side simplicity | Yes (direct) | Yes | Requires gate driver |
| Package | Compact PQFN | Larger SOT-223/TO-252 | Various |
| Switching efficiency | High | Medium | High |
FDMS6681Z offers a strong balance of low resistance, high current capability, and simple high-side control — ideal for efficient load switching.
Conclusion
The FDMS6681Z delivers excellent efficiency and thermal performance for high-side switching applications that demand low losses and high reliability. Its combination of –30 V capability, ultra-low on-resistance, high current rating, and compact PQFN package makes it a solid component for battery systems, load switches, portable electronics, and DC-power management designs.
Manufacturer Profile
ON Semiconductor (onsemi) manufactures the FDMS6681Z as part of its PowerTrench® MOSFET family. onsemi’s PowerTrench products focus on low on-resistance, efficient thermal performance and compact SMD packages suitable for high-current, low-loss switching applications. The FDMS6681Z inherits onsemi’s design priorities—very low RDS(on), controlled gate charge and robust thermal handling—making it a practical choice for load-switch, battery protection and power-path management in portable and industrial systems
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