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ON SBC846BLT1G

Table of Contents

Overview

The SBC846BLT1G is a high-gain NPN general-purpose transistor optimized for small-signal amplification and low-power switching applications. Packaged in the compact SOT-23, it delivers stable DC gain across a wide operating range, with collector current capability up to 100 mA, low noise characteristics, and strong linearity. Its voltage ratings and temperature robustness make it suitable for consumer electronics, signal conditioning, instrumentation, and low-voltage analog front ends.


Core Parameters

SBC846BLT1G
ParameterSpecification
TypeNPN Silicon Transistor
PackageSOT-23
Collector-Emitter Voltage (VCEO)65 V
Collector-Base Voltage (VCBO)80 V
Emitter-Base Voltage (VEBO)6 V
Collector Current (IC max)100 mA
DC Current Gain (hFE)200 to 450 (Group B, IC = 2 mA)
Power Dissipation (PD)225 mW
Transition Frequency (fT)300 MHz typical
Noise Figure2 dB typical
Operating Temperature–55°C to +150°C

Features

  • High DC gain (200–450) suitable for low-level signal amplification
  • 65 V VCEO supports a wide range of general purpose circuits
  • Fast 300 MHz transition frequency for high-frequency small-signal applications
  • Low noise (≈2 dB) ideal for pre-amplifier and sensing circuits
  • 100 mA IC capability for light switching loads
  • Compact SOT-23 package, reducing PCB area while maintaining strong electrical performance
  • AEC-Q101 qualified variants available, supporting automotive usage
  • Robust operating temperature from –55°C to +150°C

Typical Application Scenarios

ApplicationWhy SBC846BLT1G Fits
Low-Noise AmplifiersHigh hFE and low noise improve gain accuracy
Signal ConditioningStable linearity for analog front-ends
General Low-Power Switching100 mA IC supports logic-level loads
Portable ElectronicsSOT-23 minimizes board area in compact devices
Oscillators & RF Drivers300 MHz fT enables high-frequency circuits
Instrumentation & Sensor InterfacesHigh gain enhances sensitivity for measurement paths

Performance Comparison

FeatureSBC846BLT1GStandard NPN (General Purpose)High-Gain Variant
DC Gain (hFE)200–45080–250300–600
VCEO65 V30–50 V45–80 V
fT300 MHz100–200 MHz250–350 MHz
PackageSOT-23SOT-23 / TO-92SOT-23
NoiseLow (≈2 dB)MediumLow

SBC846BLT1G stands out for its high hFE, low noise, and excellent high-frequency characteristics, making it solid for both analog and RF-adjacent low-power circuits.


Conclusion

The SBC846BLT1G offers a dependable combination of high DC gain, low noise, 300 MHz bandwidth, and low-power switching capability in a compact SOT-23 package. Its versatility makes it suitable for consumer devices, sensor interfaces, and sensitive measurement circuits where stable gain and low distortion are essential. For engineers seeking a compact, high-gain NPN transistor with strong small-signal performance, the SBC846BLT1G is a reliable and efficient choice.


Manufacturer Profile

ON component

The SBC846BLT1G is produced by onsemi, a global semiconductor manufacturer recognized for high-quality discrete components and signal-chain building blocks. Their portfolio emphasizes reliability, low noise, and strong electrical consistency, supporting applications in consumer electronics, industrial equipment, and automotive systems.


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