TPS48111LQDGXRQ1

TI TPS48111LQDGXRQ1

Table of Contents

Overview

The TPS48111LQDGXRQ1 is an automotive-qualified, high-side N-channel MOSFET gate driver designed for switching loads up to 100 V. With a peak gate-source voltage capability of 10 V, fast turn-on/turn-off performance, and extended operating temperature support, it enables efficient and reliable driving of high-current MOSFETs in automotive, industrial, and battery-powered applications. The device provides strong protection features including reverse-battery tolerance, undervoltage lockout, and robust gate drive control, making it suitable for harsh environments and safety-critical designs.


Core Parameters

TPS48111LQDGXRQ1
ParameterSpecification
Operating Supply Voltage4.5 V to 65 V
Absolute Max Switching Voltage100 V
Peak Gate Drive Voltage10 V
Peak Source Current1.3 A
Peak Sink Current2 A
Reverse Battery Protection–36 V
Turn-on Propagation Delay15 ns typical
Turn-off Propagation Delay20 ns typical
Operating Temperature–40°C to +150°C
PackageVSON-10 (QFN 3 × 3 mm)

Features

  • 100-V capable high-side MOSFET driver, suitable for 12-V, 24-V, and 48-V automotive loads
  • Fast switching with 15-ns turn-on and 20-ns turn-off for efficient power control
  • Strong drive capability (1.3 A source, 2 A sink) supporting large MOSFET gates
  • Reverse battery protection to –36 V, ideal for automotive power rails
  • Input threshold compatible with logic-level control
  • Integrated active clamp to protect against overshoot conditions
  • Supports PWM control, enabling high-frequency operation
  • AEC-Q100 qualified, ensuring reliability in automotive environments
  • Compact 3 × 3 mm VSON package reduces PCB area while maintaining thermal performance

Typical Application Scenarios

ApplicationWhy TPS48111LQDGXRQ1 Fits
Automotive High-Side SwitchingReverse battery rating and 100-V capability meet automotive load-switching demands
48-V Mild Hybrid SystemsDrives large MOSFETs with high current and fast switching
Motor & Solenoid ControlStrong gate drive and short delays suit inductive loads
Battery Management SystemsHandles high-voltage switching safely and efficiently
Industrial Power DistributionRugged protection and wide voltage support
High-Frequency Load SwitchingFast gate transitions enable high-speed PWM designs

The TPS48111LQDGXRQ1 is a high-speed automotive-grade gate driver designed to drive external MOSFETs in high-current power distribution and protection circuits. In many automotive load-switch and eFuse designs, it is commonly paired with low-RDS(on) power MOSFETs such as SI7461DP-T1-GE3, enabling fast switching, precise current control, and robust protection performance under harsh operating conditions.


Performance Comparison

FeatureTPS48111LQDGXRQ1Standard High-Side DriverAutomotive-Grade Competitor
Max Voltage100 V40–80 V100–150 V
Reverse Battery–36 V–10 to –20 V–20 to –36 V
Drive Strength1.3 A / 2 A0.5–1 A1–2 A
Switching Speed15–20 ns50–200 ns20–40 ns
AEC-Q100YesNot alwaysYes

TPS48111LQDGXRQ1 stands out for its fast speed, high robustness, and strong protection mechanisms, making it especially suitable for demanding automotive applications.


Conclusion

The TPS48111LQDGXRQ1 is a compact, fast, and highly reliable high-side MOSFET driver designed for modern automotive and industrial systems. With its 100-V capability, fast propagation times, reverse-battery protection, and robust current drive, it enables efficient control of high-current MOSFETs in challenging environments. This device is an excellent fit for automotive switching modules, motor control units, BMS systems, and power distribution networks requiring long-term reliability.


Manufacturer Profile

TI chip

The TPS48111LQDGXRQ1 is produced by Texas Instruments (TI), a global leader in high-performance analog and power-management devices. TI’s automotive-grade components are known for reliability, precision, and rigorous qualification, supporting applications from powertrains to ADAS and industrial power systems.


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